TH-SAF1145C - CWL = 1220 nm, Single Angle Facet Gain Chip on Submount
TH-SAF1145C - CWL = 1220 nm, Single Angle Facet Gain Chip on Submount
- Broad Tuning Range
- High Output Power
- Ultra-Low Angled Facet Reflectance: 0.005% (Typ.)
- Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
- Gain Medium for Widely Tunable External Cavity Semiconductor Lasers
| Parameter | Min | Typ | Max |
|---|---|---|---|
| Operating Current (IOP) |
- | 300 mA | 500 mA |
| Center Wavelength | 1190 nm | 1220 nm | 1250 nm |
| ASE Power @ IOP | 0.5 mW | 1.0 mW | - |
| Peak Gain @ IOP | - | 20 dB | - |
| Optical Bandwidth | 60 nm | 80 nm | - |
| Gain Ripple (RMS) @ IOP Res. BW = 0.1 nm |
- | 0.35 dB | 1 dB |
| Angled Facet Reflectivity | - | 0.005% | 0.01% |
| Normal Facet Reflectivity | - | 10% | - |
| Forward Voltage | - | 1.4 V | 1.8 V |
| Chip Length | - | 1.0 mm | - |
| Waveguide Refractive Index | - | 3.2 | - |
| Lateral Beam Exit Angle | - | 26.5° | - |
| Transverse Beam Divergence (FWHM) | - | 30° | - |
| Lateral Beam Divergence (FWHM) | - | 13° | - |