TH-SAF1091H - 1650 nm Single Angle Facet Gain Chip on Submount with Heatsink
TH-SAF1091H - 1650 nm Single Angle Facet Gain Chip on Submount with Heatsink
- Broad Tuning Range
- High Output Power
- Ultra-Low Angled Facet Reflectance: 0.005% (Typ.)
- Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
- Gain Medium for Widely Tunable External Cavity Semiconductor Lasers
| Parameter | Min | Typ | Max |
|---|---|---|---|
| Operating Current (IOP) |
- | 500 mA | 800 mA |
| Center Wavelength | 1620 nm | 1650 nm | 1680 nm |
| ASE Power @ IOP | 0.8 mW | 1.3 mW | - |
| Peak Gain @ IOP | - | 23 dB | - |
| Optical Bandwidth | 80 nm | 90 nm | - |
| Gain Ripple (RMS) @ IOP Res. BW = 0.1 nm |
- | - | 0.7 dB |
| Angled Facet Reflectivity | - | 0.005% | 0.01% |
| Normal Facet Reflectivity | - | 90% | - |
| Forward Voltage | - | 1.35 V | 1.6 V |
| Chip Length | - | 1.5 mm | - |
| Waveguide Refractive Index | - | 3.2 | - |
| Lateral Beam Exit Angle | - | 26.5° | - |
| Transverse Beam Divergence (FWHM) | - | 30° | - |
| Lateral Beam Divergence (FWHM) | - | 18° | - |