TH-SAF1126C - C-Band Single Angle Facet Gain Chip on Submount
TH-SAF1126C - C-Band Single Angle Facet Gain Chip on Submount
- Broad Tuning Range
- High Output Power
- Ultra-Low Angled Facet Reflectance: 0.005% (Typ.)
- Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
- Gain Medium for Widely Tunable External Cavity Semiconductor Lasers
THSAF1126C C-Band SAF Gain Chip
| Parameter | Min | Typ | Max |
|---|---|---|---|
| Operating Current | - | 300 mA | 350 mA |
| Operating Wavelength Range | 1528 nm | - | 1568 nm |
| Threshold Current | - | 60 mA | 75 mA |
| Output Power over Band | 40 mW | 60 mW | - |
| Side-Mode Suppression Ratio | - | 50 dB | - |
| Angled Facet Reflectivity | - | 0.005% | 0.01% |
| Normal Facet Reflectivity | - | 10% | - |
| Forward Voltage | - | 1.3 V | 1.8 V |
| Chip Length | - | 1.0 mm | - |
| Waveguide Refractive Index | - | 3.2 | - |
| Lateral Beam Exit Angle | - | 19.5° | - |
| Transverse Beam Divergence (FWHM) | 26° | 30° | 34° |
| Lateral Beam Divergence (FWHM) | - | 16° | - |