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T-ELSC40 - Single-Crystal Diamond, Nitrogen-Vacancy Center Density: ≤0.03 ppb, 4.0 mm x 4.0 mm x 0.5 mm

Fosco Connect Part No.: T-ELSC40

  • $ 3,525.00 or



T-ELSC40 - Single-Crystal Diamond, Nitrogen-Vacancy Center Density: ≤0.03 ppb, 4.0 mm x 4.0 mm x 0.5 mm

Product Drawing

  • Low Nitrogen-Vacancy (NV) Center Density: ≤0.03 ppb
  • Available in Three Sizes:
    • 2.0 mm x 2.0 mm Square
    • 4.0 mm x 4.0 mm Square
    • 4.5 mm x 4.5 mm Square
  • These electronic-grade, single-crystal diamonds contain ≤5 ppb nitrogen concentration and typically ≤0.03 ppb nitrogen-vacancy (NV) concentration. Additionally, the diamonds have a very low background impurity of <1 ppb boron concentration and exhibit electron mobility that is typically greater than 2000 cm2/V⋅s. These diamonds allow the user to probe the as-grown NV defects or generate their own via ion implantation or epitaxial growth. Alternatively, they can be used as a high thermal conductivity and optically transparent heat sink for a high power laser or microelectronic device, as well as for custom-made diamond electronic devices such as radiation detectors. The diamonds are offered as 2.0 mm x 2.0 mm, 4.0 mm x 4.0 mm, or 4.5 mm x 4.5 mm squares.
Item # ELSC40
Crystallographic (Face) Orientation {100} ± 3°
Edge Orientation <110>

Dimensions

Length and Width Measured on the Smaller Face

Length 4.0 +0.2/-0.0 mm
Width 4.0 +0.2/-0.0 mm
Thickness 0.5 ± 0.05 mm
Laser Kerf ≤5°
Edge Features <0.2 mm
Roughness, Ra <5 nm
Boron Concentration <1 ppb
Nitrogen Concentration ≤5 ppb
Typical NV Concentration ≤0.03 ppb
13C Fraction 1.1%
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