T-ELSC45 - Single-Crystal Diamond, Nitrogen-Vacancy Center Density: ≤0.03 ppb, 4.5 mm x 4.5 mm x 0.5 mm

Product Drawing

• Low Nitrogen-Vacancy (NV) Center Density: ≤0.03 ppb
• Available in Three Sizes:
  • 2.0 mm x 2.0 mm Square
  • 4.0 mm x 4.0 mm Square
  • 4.5 mm x 4.5 mm Square
• These electronic-grade, single-crystal diamonds contain ≤5 ppb nitrogen concentration and typically ≤0.03 ppb nitrogen-vacancy (NV) concentration. Additionally, the diamonds have a very low background impurity of <1 ppb boron concentration and exhibit electron mobility that is typically greater than 2000 cm²/V⋅s. These diamonds allow the user to probe the as-grown NV defects or generate their own via ion implantation or epitaxial growth. Alternatively, they can be used as a high thermal conductivity and optically transparent heat sink for a high power laser or microelectronic device, as well as for custom-made diamond electronic devices such as radiation detectors. The diamonds are offered as 2.0 mm x 2.0 mm, 4.0 mm x 4.0 mm, or 4.5 mm x 4.5 mm squares.